Alibakhshikenari, M.Virdee, B.S.Khalily, M.See, C.H.Abd-Alhameed, RaedFalcone, F.Denidni, T.A.Limiti, E.2021-05-052021-05-192021-05-052021-05-192020-092020-09Alibakhshikenari M, Virdee BS, Khalily M et al (2020) High-Gain On-Chip Antenna Design on Silicon Layer with Aperture Excitation for Terahertz Applications. IEEE Antennas and Wireless Propagation Letters. 19(9): 1576-1580.RMSID:212591670http://hdl.handle.net/10454/18476http://hdl.handle.net/10454/18476NoThis letter investigates the feasibility of designing a high gain on-chip antenna on silicon technology for subterahertz applications over a wide-frequency range. High gain is achieved by exciting the antenna using an aperture fed mechanism to couple electromagnetics energy from a metal slot line, which is sandwiched between the silicon and polycarbonate substrates, to a 15-element array comprising circular and rectangular radiation patches fabricated on the top surface of the polycarbonate layer. An open ended microstrip line, which is orthogonal to the metal slot-line, is implemented on the underside of the silicon substrate. When the open ended microstrip line is excited it couples the signal to the metal slot-line which is subsequently coupled and radiated by the patch array. Measured results show the proposed on-chip antenna exhibits a reflection coefficient of less than-10 dB across 0.290-0.316 THz with a highest gain and radiation efficiency of 11.71 dBi and 70.8%, respectively, occurred at 0.3 THz. The antenna has a narrow stopband between 0.292 and 0.294 THz. The physical size of the presented subterahertz on-chip antenna is 20 × 3.5 × 0.126 mm3.enCoupling feeding mechanismHigh gainSilicon technologyTerahertz on-chip antennaTerahertz applicationsWide-frequency rangeArticlehttps://doi.org/10.1109/LAWP.2020.30108652021-05-05