Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks

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Author
Sajedin, M.Elfergani, Issa T.
Rodriguez, J.
Violas, M.
Asharaa, Abdalfettah S.
Abd-Alhameed, Raed

Fernandez-Barciela, M.
Abdulkhaleq, Ahmed M.
Keyword
Power amplifiersClass-F
Power dissipation
Heat transfer
GaN HEMT transistor
5G Cellular Networks
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© 2020 Radioengineering Society. This work is licensed under a Creative Commons Attribution 4.0 International License. http://creativecommons.org/licenses/by/4.0/Peer-Reviewed
YesOpen Access status
openAccessAccepted for publication
2021-04-24
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Show full item recordAbstract
This work integrates a harmonic tuning mechanism in synergy with the GaN HEMT transistor for 5G mobile transceiver applications. Following a theoretical study on the operational behavior of the Class-F power amplifier (PA), a complete amplifier design procedure is described that includes the proposed Harmonic Control Circuits for the second and third harmonics and optimum loading conditions for phase shifting of the drain current and voltage waveforms. The performance improvement provided by the Class-F configuration is validated by comparing the experimental and simulated results. The designed 10W Class-F PA prototype provides a measured peak drain efficiency of 64.7% at 1dB compression point of the PA at 3.6GHz frequency.Version
Accepted manuscriptCitation
Sajedin M, Elfergani IT, Rodriguez J et al (2021) Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks. Radioengineering. 30(2): 372-380.Link to Version of Record
https://doi.org/10.13164/re.2021.0372Type
Articleae974a485f413a2113503eed53cd6c53
https://doi.org/10.13164/re.2021.0372