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dc.contributor.authorAlibakhshikenari, M.
dc.contributor.authorVirdee, B.S.
dc.contributor.authorKhalily, M.
dc.contributor.authorSee, C.H.
dc.contributor.authorAbd-Alhameed, Raed A.
dc.contributor.authorFalcone, F.
dc.contributor.authorDenidni, T.A.
dc.contributor.authorLimiti, E.
dc.date.accessioned2021-05-05T12:11:21Z
dc.date.accessioned2021-05-19T09:13:24Z
dc.date.available2021-05-05T12:11:21Z
dc.date.available2021-05-19T09:13:24Z
dc.date.issued2020-09
dc.identifier.citationAlibakhshikenari M, Virdee BS, Khalily M et al (2020) High-Gain On-Chip Antenna Design on Silicon Layer with Aperture Excitation for Terahertz Applications. IEEE Antennas and Wireless Propagation Letters. 19(9): 1576-1580.en_US
dc.identifier.urihttp://hdl.handle.net/10454/18476
dc.descriptionNoen_US
dc.description.abstractThis letter investigates the feasibility of designing a high gain on-chip antenna on silicon technology for subterahertz applications over a wide-frequency range. High gain is achieved by exciting the antenna using an aperture fed mechanism to couple electromagnetics energy from a metal slot line, which is sandwiched between the silicon and polycarbonate substrates, to a 15-element array comprising circular and rectangular radiation patches fabricated on the top surface of the polycarbonate layer. An open ended microstrip line, which is orthogonal to the metal slot-line, is implemented on the underside of the silicon substrate. When the open ended microstrip line is excited it couples the signal to the metal slot-line which is subsequently coupled and radiated by the patch array. Measured results show the proposed on-chip antenna exhibits a reflection coefficient of less than-10 dB across 0.290-0.316 THz with a highest gain and radiation efficiency of 11.71 dBi and 70.8%, respectively, occurred at 0.3 THz. The antenna has a narrow stopband between 0.292 and 0.294 THz. The physical size of the presented subterahertz on-chip antenna is 20 × 3.5 × 0.126 mm3.en_US
dc.language.isoenen_US
dc.relation.isreferencedbyhttps://doi.org/10.1109/LAWP.2020.3010865en_US
dc.subjectCoupling feeding mechanismen_US
dc.subjectHigh gainen_US
dc.subjectSilicon technologyen_US
dc.subjectTerahertz on-chip antennaen_US
dc.subjectTerahertz applicationsen_US
dc.subjectWide-frequency rangeen_US
dc.titleHigh-Gain On-Chip Antenna Design on Silicon Layer with Aperture Excitation for Terahertz Applicationsen_US
dc.status.refereedYesen_US
dc.date.Accepted2020
dc.date.application2020-07-21
dc.typeArticleen_US
dc.type.versionNo full-text in the repositoryen_US
dc.date.updated2021-05-05T11:11:32Z
refterms.dateFOA2021-05-19T09:13:47Z
dc.openaccess.statusNot Open Accessen_US


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