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dc.contributor.authorSpittel, D.*
dc.contributor.authorPoppe, J.*
dc.contributor.authorMeerbach, C.*
dc.contributor.authorZiegler, C.*
dc.contributor.authorHickey, Stephen G.*
dc.contributor.authorEychmüller, A.*
dc.date.accessioned2017-12-11T15:05:23Z
dc.date.available2017-12-11T15:05:23Z
dc.date.issued2018
dc.identifier.citationSpittel D, Poppe J, Meerbach C et al (2018) Absolute Energy Level Positions in CdSe Nanostructures from Potential-Modulated Absorption Spectroscopy (EMAS). ACS Nano. 11(12): 12174-12184.en_US
dc.identifier.urihttp://hdl.handle.net/10454/14149
dc.descriptionYesen_US
dc.description.abstractSemiconductor nanostructures like CdSe quantum dots and colloidal nanoplatelets exhibit remarkable optical properties, making them interesting for applications in optoelectronics and photocatalysis. For both areas of application a detailed understanding of the electronic structure is essential to achieve highly efficient devices. The electronic structure can be probed using the fact that optical properties of semiconductor nanoparticles are found to be extremely sensitive to the presence of excess charges that can for instance be generated by means of an electrochemical charge transfer via an electrode. Here we present the use of potential modulated absorption spectroscopy (EMAS) as a versatile spectroelectrochemical method to obtain absolute band edge positions of CdSe nanostructures versus a well-defined reference electrode under ambient conditions. In this the spectral properties of the nanoparticles are monitored dependent on an applied electrochemical potential. We developed a bleaching model that yields the lowest electronic state in the conduction band of the nanostructures. A change in the band edge positions caused by quantum confinement is shown both for CdSe quantum dots as well as for colloidal nanoplatelets. In the case of CdSe quantum dots these findings are in good agreement with tight binding calculations. The method presented is not limited to CdSe nanostructures but can be used as a universal tool. Hence, this technique allows the determination of absolute band edge positions of a large variety of materials used in various applications.en_US
dc.language.isoenen_US
dc.relation.isreferencedbyhttps://doi.org/10.1021/acsnano.7b05300en_US
dc.rights© 2018 ACS. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano.en_US
dc.subjectSpectroelectrochemistryen_US
dc.subjectSemiconductor nanoparticles
dc.subjectBand edge position
dc.subjectNanoplatelets
dc.subjectPotential modulation
dc.subjectAbsorption
dc.titleAbsolute Energy Level Positions in CdSe Nanostructures from Potential-Modulated Absorption Spectroscopy (EMAS)en_US
dc.status.refereedYesen_US
dc.date.application2017-11-27
dc.typeArticleen_US
dc.type.versionAccepted Manuscripten_US


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